Adhesively sealed metal electronic package incorporating a multi-chip module

ABSTRACT

There is provided a leadframe assembly for supporting a hybrid circuit. The hybrid circuit is supported by either the base of an electronic package or by a die attach paddle and electrically interconnected to a leadframe by wire bonds. A plurality of semiconductor devices are mounted on the assembly and supported by either metallization pads formed on the hybrid circuit, a dielectric layer of the hybrid circuit, a die attach paddle, a metallic package component or combinations thereof.

This patent application is a continuation of U.S. patent applicationSer. No. 07/933,270 entitled "Adhesively Sealed Metal Electronic PackageIncorporating a Multi-Chip Module" by Jeffrey S. Braden et al, filedAug. 21, 1992 (now abandoned).

BACKGROUND OF THE INVENTION

The present invention relates to metal packages for housing a pluralityof integrated circuit devices. More particularly, the invention relatesto an adhesively sealed metal package having a circuit electricallyinterconnected to a leadframe and thermally connected to the packagebase.

Adhesively sealed metal packages are disclosed in U.S. Pat. No.4,105,861 to Hascoe; U.S. Pat. No. 4,461,924 to Butt and U.S. Pat. No.4,939,316 to Mahulikar et al, all of which are incorporated by referencein their entireties herein. The packages have a metallic base and cover.A leadframe is disposed between the base and cover and adhesively bondedto both. The leadframe may include a centrally positioned die attachpaddle with an integrated circuit device bonded thereto. Bond wireselectrically interconnect the device to the leadframe.

One advantage of metal packages over molded plastic packages such asquad flat packs (QFPs) or ceramic packages such as ceramic dual in linepackages (CERDIPs), is improved thermal conduction. The metal packageremoves heat generated during the operation of the device moreefficiently than plastic or ceramic packages. The improved heatdissipation is due to both the improved thermal conduction of themetallic components and the ability of the components to disperse heatlaterally along all surfaces of the package. The improved thermaldissipation permits encapsulation of more complex and higher powerintegrated circuit devices than is possible with plastic or ceramicpackages.

As the integrated circuit devices become more complex, more electricalinterconnections with external circuitry and with other integratedcircuit devices are required. The leadframe which electricallyinterconnects the device to external circuitry is usually manufacturedfrom a copper base alloy having a thickness of from about 0.13 mm toabout 0.51 mm (5-20 mils). Due to stamping and etching constraints, theminimum width of each lead, as well as the spacing between leads isabout equal to the thickness of the leadframe. As a result, there is alimit to the number of leads which may approach the integrated circuitdevice.

An additional limitation is lead length. As the integrated circuitdevices become more powerful and operate at higher operating speeds, thetime for an electronic signal to travel from one device to the nextlimits the speed of the electronic assembly (such as a computer). When asingle device is encapsulated in each electronic package, the electronicsignal must travel from the device, through a bond wire, through aleadframe, through a circuit trace on a printed circuit board, through asecond leadframe, through a second bond wire and then to a seconddiscretely housed device.

One approach to increase the density of interconnections to anintegrated circuit device and to reduce the time required for anelectric signal to travel from device to device is a hybrid circuit. Ahybrid circuit has conductive circuit traces formed on a dielectricsubstrate. Discrete integrated circuit devices are electricallyinterconnected to the circuit traces such that a plurality of devicesmay all be located on a single substrate. The hybrid circuit can then beencapsulated in a metal, plastic or ceramic package typically referredto as a multi-chip module. Examples of multi-chip modules, as well as adescription of their development may be found in an article by Hodsonentitled "Circuits Meet the Challenge of Size, Power and Flexibility"which appeared in the October, 1991 issue of ELECTRONIC PACKAGING ANDPRODUCTION and is incorporated by reference in its entirety herein.

Multi-chip modules address the problem of increasing the density ofintegrated circuit devices. However, the dielectric substrates, whichare typically silicon or alumina, are not ideal for the conduction ofheat from the multi-chip module. While aluminum nitride has beenproposed as an alternate and will provide better thermal conduction, thematerial is brittle and hard to fabricate.

Applicants have determined that a low cost, high thermal conductivitymulti-chip module may be formed using a metallic substrate. The metal,preferably copper, aluminum or an alloy thereof, has better thermalconductivity than conventional silicon and alumina substrates and alsobetter thermal conductivity than Kovar which is frequently used to housethe circuits.

SUMMARY OF THE INVENTION

Accordingly, it is an object of the invention to provide a multi-chipmodule having high thermal conductivity. It is a feature of theinvention that a circuit, either rigid or flexible, and either single ormulti-layer, is adhesively bonded to a metallic substrate with aninorganic dielectric layer disposed therebetween. A plurality ofintegrated circuit devices are electrically interconnected either tothat circuit or to a leadframe positioned around the perimeter of thecircuit. Yet another feature of the invention is that the devices may beattached to any one of the metallic substrate, inorganic dielectriclayer, the circuit traces or an intervening die attach paddle.

It is an advantage of the invention that the multi-chip modules havehigh thermal dissipation capabilities. Another advantage of theinvention is that the inorganic dielectric layer electrically isolatesthe integrated circuit devices, the adhesively bonded circuit and theleadframe from the metallic package components of the multi-chip module.

In accordance with the invention, there is provided a leadframe assemblyfor electrically interconnecting a plurality of semiconductor devices.The assembly includes a leadframe with inner lead ends defining acentral region and a hybrid circuit. The hybrid circuit is made up of adielectric substrate which supports circuit traces. The hybrid circuitcontains a first means for electrically interconnecting at least aportion of the circuit traces to the inner lead ends of the leadframeand a second means for supporting a plurality of discrete semiconductordevices.

In a second embodiment of the invention, the leadframe assembly isencapsulated within metallic package components or is encased in aplastic molding resin.

The above stated objects, features and advantages, as well as others,will become more apparent from the specification and drawings whichfollow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows in cross sectional representation an adhesively sealedmetal package as known from the prior art.

FIG. 2 shows in top planar view an integrated circuit device bonded to acentrally positioned die attach paddle as known from the prior art.

FIG. 3 shows in top planar view a hybrid circuit mounted on a die attachpaddle and electrically interconnected to a leadframe in accordance witha first embodiment of the invention.

FIG. 4 shows in cross sectional representation a multi-chip moduleincorporating a centrally positioned die attach paddle.

FIG. 5 shows in cross sectional representation a hybrid circuit mountedon a metallic package component in accordance with a second embodimentof the invention.

FIG. 6 shows in cross sectional representation a hybrid circuit mountedon a metallic package component and incorporating a multi-layer circuitin accordance with a third embodiment of the invention.

FIG. 7 shows in cross sectional representation a multi-chip module witha leadframe adhesively bonded to a metallic package component inaccordance with a fourth embodiment of the invention.

FIG. 8 shows in cross-sectional representation a hybrid circuitencapsulated in an adhesively sealed metal package.

DESCRIPTION OF THE PREFERRED EMBODIMENT

The following definitions apply throughout this application:

Hybrid Circuit--a circuit which combines several different components ina single package. Typically, the hybrid circuit will include circuittraces supported on a dielectric substrate and a plurality of discretesemiconductor devices.

Multi-Chip Module--an electronic package for housing one or more hybridcircuits.

FIG. 1 shows in cross sectional representation an adhesively sealedmetal package 10 as described in U.S. Pat. No. 4,939,316. The package 10has a metallic base component 12 and a cover component 14. A leadframe16 is disposed between the metallic base component 12 and the covercomponent 14 and adhesively bonded to both by a polymer adhesive 18.

A die attach paddle 20 which is typically formed from the same metal asthe leadframe is bonded to the metallic base component 12 by a thermallyconductive pad attach adhesive 22. An integrated circuit device 24,typically a silicon based semiconductor integrated circuit, is bonded tothe die attach paddle 20 by a die attach 26 which may be either a lowmelting temperature solder or a polymer adhesive. Small diameter bondwires 28 electrically interconnect the leadframe 16 to the semiconductordevice 24.

In the electronic package of U.S. Pat. No. 4,939,316, both the metallicbase component 12 and the cover component 14 are formed from aluminum oran aluminum base alloy. At least a portion of the surfaces 30 of thepackage components is coated with an anodization layer which providesboth corrosion resistance and electrical isolation. Dependent on whetherthe surface 32 of the interior of the metallic base component 12 isanodized or not, the semiconductor device 24 may be electricallyinterconnected to the metallic base component 12 or electricallyisolated therefrom.

FIG. 2 shows in top planar view the positioning of the semiconductordevice 24 on a die attach paddle 20 as known from the prior art. The dieattach paddle 20 is disposed within a central region defined by theinner lead tips 34 of the leadframe. The inner lead tips 34 may approachthe semiconductor device 24 from all four directions as in a quadconfiguration; from two sides (dual in-line configuration); or from asingle side (single in-line configuration). Small diameter bond wires 28electrically interconnect the semiconductor device 24 to the inner leadends 34 of the leadframe. These bond wires 28 are generally smalldiameter, typically on the order of 0.025 mm (1 mil), wires of copper,aluminum, gold or alloys thereof and are thermosonically bonded to theinner lead ends 34 of the leadframe and metallized input/output pads onthe electrically active face of the semiconductor device 24.Alternatively, thin strips of copper foil as utilized in tape automatedbonding (TAB) may also form the interconnection between thesemiconductor device 24 and the inner lead ends 28.

Due to the stamping and etching constraints discussed above, a limitednumber of inner lead ends 34 may approach the semiconductor device 24.Spacing the inner lead ends 34 farther from the semiconductor device 24will permit the inclusion of additional leads, but this is not a desiredsolution. As the bond wire length increases, the operating speed of thedevice decreases. Longer bond wires are also prone to sag which maycause an electrical short circuit. These problems are solved by thefirst embodiment of Applicants' invention which is illustrated in topplanar view in FIG. 3.

FIG. 3 shows a leadframe assembly 40 for the electrical interconnectionof a hybrid circuit 42. The hybrid circuit 42 comprises a dielectricsubstrate 44 which supports a plurality of circuit traces 46. Thedielectric substrate 44 may be formed from any suitable insulativematerial, either organic or inorganic, and may be either rigid orflexible. Generally, if the semiconductor devices 24^(a), 24^(b),24^(c), 24^(d) are mounted on the dielectric substrate as shown forsemiconductor devices 24¹, 24^(b), 24^(d), a relatively thin, on theorder of 0.025-0.076 mm (1-3 mils), dielectric substrate is preferred tofacilitate the conduction of heat from the semiconductor devices. If thesemiconductor device 24^(c) is mounted in an aperture 48 formed throughthe dielectric substrate 44 directly to either the package base (notshown) or a die attach paddle 20, the thickness of the dielectricsubstrate becomes less important. Similarly, if the dielectric substrate44 is formed from an insulative material having good thermalconductivity such as aluminum nitride or silicon carbide, the thicknessof the substrates is less important.

Typical materials for the dielectric substrate include ceramics such asalumina (Al₂ O₃), aluminum nitride (AlN) and silicon carbide (SIC) Thedielectric substrate may also be an organic such as polyimide or anepoxy, either filled or unfilled. Other substrate materials includesilicon which has good thermal conductivity and a coefficient of thermalexpansion exactly matching that of silicon based semiconductor devices24.

A plurality of circuit traces 46 are formed on the dielectric substrate44 by conventional means. For materials able to withstand hightemperatures such as ceramic and silicon, a desired pattern may beformed from a metallic paste by a process such as screen printing ordirect writing. The metallic paste is then fired to drive off organicbinders leaving behind a metallized circuit pattern. When the dielectricsubstrate 44 is organic based, such as a polyimide, a metallic film maybe deposited by electroless plating or by lamination of a thin layer ofmetallic foil. Selective etching, such as photolithography, forms thedescribed circuit patterns.

The circuit traces 46 can electrically interconnect semiconductordevices 24^(a), 24^(b). Other circuit traces 46' can form ametallization pad for attachment of an integrated circuit device 24^(a).A first means is provided to electrically interconnect circuit traces tothe inner lead ends 34 of the leadframe. Such first means include ametallized interposer pad 46" to shorten the length of bond wiresextending between the inner lead ends 34 of the leadframe and asemiconductor device 24^(d).

The circuit traces can form a metallic foil 47 bonded to semiconductordevice 24^(d) in TAB format or form a series of discrete bonding sitesfor direct soldering to input/output sites on the integrated circuitdevice ("flip chip bonding").

The circuit traces can also form another first means for electricalinterconnection or an extension 50 for direct bonding to the inner leadends 34. The circuit traces 46^(a) can form bonding pads for the directattachment of inner lead ends 34 to the hybrid circuit 42. Attachmentmay be by any suitable electrically conductive means such as thermosonicbonding, thermal compression bonding, soldering and conductiveadhesives. Preferred are low melting solders such as gold tin and leadtin alloys.

Attachment of the leadframe assembly 40 to the metallic base component12 of an adhesively sealed metal package is illustrated incross-sectional representation in FIG. 4. FIG. 4 shows two semiconductordevices 24^(a), 24^(c) bonded to a die attach paddle 20 by means of ahybrid circuit 42. Semiconductor device 24^(a) is directly bonded to ametallized circuit trace 46' bonding pad. As more clearly shown in FIG.3, metallized bonding pad 46' may electrically interconnect the backsideof the semiconductor device 24^(a) to the leadframe or to othersemiconductor devices.

Referring back to FIG. 4, the semiconductor device 24^(c) can extendthrough an aperture 48 in the hybrid circuit 42 for direct bonding tothe die attach paddle 20. Attachments of the semiconductor devices24^(a), 24^(c) to either the hybrid circuit 42 or the die attach paddle20 may be by any conventional means such as an epoxy or a lowtemperature melting solder. If electrical interconnection between thebackside of the semiconductor device and the bonding site is desired,either a metallic solder such as the gold tin eutectic or a lead tincomposition may be used. Alternatively, a conductive adhesive such as asilver filled epoxy may be utilized.

If, as illustrated in FIG. 3, the integrated circuit device 24^(d) isdirectly bonded to the dielectric substrate 44, suitable die attachmaterials include polymer adhesives and, when the dielectric substrate44 is a high temperature substrate such as ceramic or silicon, a sealingglass may be utilized. Additionally, metals which alloy with thesubstrate, for example, for a silicon substrate, gold, may be utilized.

Referring back to FIG. 4, two methods of interconnecting the hybridcircuit 42 to an external leadframe are illustrated. Small diameter bondwires 28 electrically interconnect the inner lead ends 34 to a bondingpad 46" which is then electrically interconnected through a second bondwire 28' to a semiconductor device 24^(c). This interposer circuitstructure reduces the length of the bond wire required to interconnectthe leadframe to the semiconductor device 24^(c).

Alternatively, foil extensions 50 may extend from the circuitmetallizations 46 for direct interconnection to inner lead ends 34. Bond52 between the foil extension 50 and the inner lead end 34 may be by anysuitable means which maintains electrical conductivity between the foilextension and the inner lead end such as a conductive adhesive, a solderor thermal compression or thermosonic bonding. Most preferred are lowmelting temperature solders such as gold-tin or lead-tin alloys.

The leadframe assembly 40 is then bonded to a metallic base component 12by a pad attach adhesive 22. The pad attach adhesive 22 may be anysuitable metallic or polymer adhesive such as a solder or epoxy. When apolymer adhesive is utilized, it is desirable to increase the thermalconductivity of the adhesive to improve thermal conduction. The padattach adhesive 22 may be a thermosetting epoxy filled with a thermallyconductive material such as silver, graphite or alumina. Oneparticularly advantageous aspect of this embodiment is illustrated bythe direct bonding of semiconductor device 24^(c) to die attach paddle20. While all the advantages of the hybrid circuit 42 are obtained, thesemiconductor device 24^(c) is in direct contact with the metallic dieattach paddle 20. Heat generated by the semiconductor device does notpass through a thermally insulating dielectric substrate 44 to reach thethermally conductive die attach paddle 20.

A second embodiment of the invention is illustrated in cross sectionalrepresentation in FIG. 5. The hybrid circuit 42 is bonded such as by anadhesive 54 directly to the metallic base component 12. While thedielectric substrate 44 provides electrical isolation between thecircuit traces 46 and the metallic base component 12, it is desirable toprovide an inorganic dielectric layer 56 between the metallic basecomponent and the hybrid circuit 42. When the metallic substrate isaluminum or an aluminum base alloy, the inorganic dielectric layer mayconstitute a layer of anodized aluminum formed by any suitableanodization process, such as anodic immersion in a solution containingsulfuric acid and sulfosalicylic acid which provides an integral blackcolor for aluminum alloys of the 3xxx series (aluminum containing up to1.5 weight percent manganese) as disclosed in U.S. Pat. No. 5,066,368 toPasqualoni et al which is incorporated by reference in its entiretyherein.

Where the metallic base component 12 is copper or a copper base alloy,the inorganic dielectric layer 56 may constitute a thin refractory oxidelayer formed in situ, by coating with a second material and forming theinorganic dielectric layer from that second material or by directbonding of an insulating layer. The "in situ" process involves formingthe inorganic dielectric layer 56 directly from the constituents of thecopper base alloy as more fully described in U.S. Pat. No. 4,862,323 byButt. Preferred copper alloys contain from about 2 to about 12 percentby weight aluminum. One particularly preferred alloy is copper alloyC6381 containing 2.5 to 3.1% aluminum, 1.5 to 2.1% silicon and thebalance copper. The copper base alloy is oxidized by heating in gaseshaving a low oxygen content. One suitable gas is 4% hydrogen, 96%nitrogen and a trace of oxygen released from a trace of water mixed inthe gas.

If the copper base alloy is not suited for in situ formation of theinorganic dielectric layer 56, the copper base alloy may be clad with ametal or alloy capable of forming the refractory oxide as disclosed inU.S. Pat. No. 4,862,323. Alternatively, as disclosed in U.S. Pat. No.4,888,449 to Crane et al, the copper base substrates may be coated witha second metal, such as nickel, and a refractory oxide formed on thecoating layer.

Another suitable technique is disclosed in U.S. Pat. No. 4,495,378 toDotzer et al. An iron or copper substrate is coated with a metallicflash of copper or silver. Aluminum is then electrolytically depositedon the flash and anodized to form an inorganic dielectric layer.

Yet another method of forming an inorganic dielectric layer 56 on ametallic base component 12 is disclosed in U.S. Pat. No. 4,611,745 toNakahashi et al. An aluminum nitride substrate is soldered to a copperlayer using a braze material comprising silver and a reactive metalselected from the group consisting of titanium, zirconium and hafnium.

Whatever method is used for the formation of the inorganic dielectriclayer 56, it is preferred that the formation of the layer is selective,for example, when an electrolytic process is used such as anodization, aplater's tape may mask selected areas to prevent formation of the layerin those regions. By selective deposition, semiconductor device 24^(e)may be bonded directly to the metallic base component 12 to maximizethermal conduction from the electronic device. Alternatively, thesemiconductor device 24^(f) may be bonded to the inorganic dielectriclayer. The choice between embodiments 24^(e) and 24^(f) depends onwhether electrical isolation from the metallic base component 12 isdesired.

As with the preceding embodiment, the semiconductor device 24^(b) may bebonded to a metallization pad 46' formed from the circuitry traces 46.

FIG. 6 illustrates in cross sectional representation a third embodimentof the invention. In this embodiment, the hybrid circuit comprises amulti-layer hybrid circuit 58 having a plurality of metallic layers andat least one dielectric layer separating the metallic layers. Circuittraces 46 may be formed on the first metallic layer 60 as well as thesecond metallic layer 62. Alternatively, one of the metallic layers maycomprise a solid sheet for use as a ground or power plane. Anelectrically conductive via 64 formed by any means known in the art, forexample, deposition of a carbon black dispersion on the walls of anon-conductive via followed by electrolytic or electroless plating of aconductive material such as copper as disclosed in U.S. Pat. No.4,619,741 to Minten et al, may be utilized. The conductive vias 64 allowelectrical interconnection of the second metallic layer to input/outputsites on the face of the semiconductor device 24^(b). The semiconductordevices may be bonded to either of the metallic layers, to theintervening dielectric layer 64, to a die attach paddle (not shown), tothe inorganic dielectric layer 56 or to the metallic base component 12.

While FIG. 6 shows a multi-layer hybrid circuit 58 comprising two metallayers and a single dielectric layer, there may be any number ofmetallic layers and intervening dielectric layers. Additionally, whileFIG. 6 illustrates an embodiment in which the multi-layer hybrid circuit58 is directly bonded to an inorganic dielectric layer 56 formed on thesurface of a metallic base component 12, it is within the scope of theinvention for a die attach paddle to be disposed between the multi-layerhybrid circuit and the metallic base component.

FIG. 7 illustrates in cross sectional representation a fourth embodimentof the invention. The metallic base component 12 has an inorganicdielectric layer 56 formed on at least one surface. A thermallyconductive, electrically insulating pad attach adhesive 22 such as athermosetting polymer, thermoplastic polymer or sealing glass bonds boththe inner lead ends 34 of the leadframe and a plurality of die attachpaddles 20 to the metallic base component. Bond wires 28 electricallyinterconnect the semiconductor devices 24 to the leadframe and tometallic circuit runs 66 which may constitute inner lead fingers ormetallic runs electrically isolated from the leadframe.

The semiconductor devices 24 are bonded to die attach paddles 20 withdie attach adhesive 26. The die attach paddles are then adhesivelybonded to the inorganic dielectric layer by a thermally conductive padattach adhesive 22.

The leadframe assemblies illustrated in FIGS. 3-7 may be encapsulated inany suitable electronic package, such as plastic, ceramic or metal. FIG.8 illustrates in cross sectional representation a preferred embodimentin which a multi-layer hybrid circuit is encapsulated within a metalelectronic package 70. All elements illustrated in FIG. 8 are not drawnto scale to better show the structure of the hybrid circuit 58. As aresult, certain elements, notably semiconductor devices 24, aredistorted in the Figure.

The package has a metallic base component 12 formed from a thermallyconductive material such as an aluminum base alloy. Fins 72 may beformed in the metallic base component 12 to increase thermaldissipation. A multi-layer hybrid circuit 58 having first 60 and second62 metallic layers and intervening dielectric layers 64 is bonded byadhesive 54 to a die attach paddle 20. Thermally conductive pad attachadhesive 22 bonds the multi-layer hybrid circuit and the die attachpaddle 20 to the metallic base component 12. The surface 30 of the basecomponent 12 is preferably coated with an inorganic dielectric layer toimprove electrical isolation and corrosion resistance. The firstmetallic layer 60 contains cantilever foil extensions 50 for directbonding to the inner leads 34 of leadframe 16. A plurality ofsemiconductor devices 24 are bonded to the die attach paddle 20. Bondwires 28 electrically interconnect the semiconductor devices 24 tocircuit traces formed in the first metallic layer. Electricalinterconnection to the second metallic layer may also be incorporatedthrough the use of electrically conductive vias (not shown).

A cover component 14 and a metallic base component 12 are bonded to theleadframe 16 by a polymer adhesive 18. If the polymer adhesive 18 is athermosetting epoxy or another adhesive requiring heat for cure, air inthe package cavity 74 will expand during heating. To prevent the changein cavity volume from creating pressure on the polymer adhesive 18 andcausing an inadequate seal, a vent hole 76 is preferably formed in thecover component 14. The vent hole 76 is subsequently sealed, forexample, by adhesively sealing a small metal slug to complete themulti-chip module 70.

While FIG. 8 illustrates an embodiment in which a leadframe assembly isencapsulated within a metal package, it is within the scope of theinvention to encapsulate any of the above-described leadframe assembliesin a molded plastic package, a ceramic package or a glass sealed metalpackage.

The patents and publications cited in this application are intended tobe incorporated by reference.

It is apparent that there has been provided in accordance with thisinvention a leadframe assembly incorporating a hybrid circuit whichfully satisfies the objects, means and advantages set forthhereinbefore. While the invention has been described in combination withspecific embodiments thereof, it is evident that many alternatives,modifications and variations will be apparent to those skilled in theart in light of the foregoing description. Accordingly, it is intendedto embrace all such alternatives, modifications, and variations as fallwithin the spirit and broad scope of the claims.

We claim:
 1. An electronic package encapsulating a plurality ofintegrated circuit devices, comprising:a metallic base component formedfrom a copper or a copper base alloy coated with a second metal selectedfrom the group consisting of nickel and aluminum, said metallic basecomponent at least partially coated with a refractory oxide formed fromsaid second metal; a hybrid circuit assembly having a dielectricsubstrate supporting circuit traces and containing a first meanselectrically interconnecting said integrated circuit devices to externalcircuitry and a second means supporting said plurality of integratedcircuit devices; and a third means bonding said hybrid circuit to saidmetallic base component.
 2. An electronic package encapsulating aplurality of integrated circuit devices, comprising:a metallic basecomponent formed from a copper base alloy containing from about 2% toabout 12% by weight aluminum and at least partially coated with analumina refractory oxide layer formed in situ; a hybrid circuit assemblyhaving a dielectric substrate supporting circuit traces and containing afirst means electrically interconnecting said integrated circuit devicesto external circuitry and a second means supporting said plurality ofintegrated circuit devices; and a third means bonding said hybridcircuit to said metallic base component.
 3. The electronic package ofclaim 1 wherein said third sealing means is a thermosetting polymerfilled with a material to increase thermal conductivity.
 4. Theelectronic package of claim 3 wherein said second means is selected fromthe group consisting of bonding of said plurality of integrated circuitdevices to metallized pads formed on said dielectric substrate, bondingsaid plurality of integrated circuit devices to said dielectricsubstrate, bonding said plurality of integrated circuit devices to saidinorganic dielectric layer, and bonding said plurality of integratedcircuit devices to said metallic base component and combinationsthereof.
 5. The electronic package of claim 4 wherein said first meansis selected from the group consisting of metallized interposer pads,metallic foil extending from said dielectric substrate to said innerleads and metallized bonding pads for direct attachment to said innerleads.
 6. The electronic package of claim 5 wherein a polymer moldingresin surrounds at least a portion of said leadframe and of saidmetallic base component.
 7. The electronic package of claim 2 whereinsaid third sealing means is a thermosetting polymer filled with amaterial to increase thermal conductivity.
 8. The electronic package ofclaim 7 wherein said second means is selected from the group consistingof bonding of said plurality of integrated circuit devices to metallizedpads formed on said dielectric substrate, bonding said plurality ofintegrated circuit devices to said dielectric substrate, bonding saidplurality of integrated circuit devices to said inorganic dielectriclayer, and bonding said plurality of integrated circuit devices to saidmetallic base component and combinations thereof.
 9. The electronicpackage of claim 8 wherein said first means is selected from theconsisting of metallized interposer pads, metallic foil extending fromsaid dielectric substrate to said inner leads and metallized bondingpads for direct attachment to said inner leads.
 10. The electronicpackage of claim 9 wherein a polymer molding resin surrounds at least aportion of said leadframe and of said metallic base component.